講座通知:“攜手電氣精英，與未來同行”系列講座第 371 期

暨 IEEE PELS 武漢分會邀請學術報告

    主講人：Francesco Iannuzzo

主講人簡介：

Francesco Iannuzzo received the M.Sc. degree in Electronic Engineering and the Ph.D. degree in Electronic and Information Engineering from the University of Naples, Italy, in 1997 and 2002, respectively. He is primarily specialized in power device modelling.

He is currently a professor of reliable power electronics at the Aalborg University, Denmark, where he is also part of CORPE, the Center of Reliable Power Electronics. His research interests are in the field of reliability of power devices, including mission-profile based life estimation, condition monitoring, failure modelling and testing up to MW-scale modules under extreme conditions. He is author or co-author of more than 220 publications on journals and international conferences, three book chapters and four patents. Besides publication activity, over the past years he has been contributing 17 technical seminars about reliability at

first conferences as ISPSD, EPE, ECCE, PCIM and APEC.

Prof. Iannuzzo currently serves as an Associate Editor for the IEEE Transactions on Industry Applications, Journal of Emerging and Selected Topics in Power Electronics (JESTPE), Open Journal of Power Electronics, EPE Journal, and Elsevier Microelectronics Reliability. He is vice-chair of the IAS Power Electronic Devices and Components Committee. In 2018 he was the general chair of the 29th ESREF, the first European conference on the reliability of electronics, which scored 400+ participants from 43 countries, and has been recently appointed general chair for the ECCE-Europe conference in 2023.

講座簡介：

The Silicon-Carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET) is the most disputed technology in power electronics over the last decade, as it represents a concrete candidate to take over the silicon-based traditional Insulated-Gate Bipolar Transistors (IGBTs). Many hurdles still need to be overtaken, though, including primarily cost and reliability.

The webinar presents the current issues and some case studies about testing for the reliability of SiC power MOSFETs. A brief introduction about the importance of reliability in power electronics is given along with some reference to the state-of-the-art SiC MOSFET technology. Afterward, a couple of detailed studies are presented, regarding both wear- and short-circuit capability, including the related issues at packaging and semiconductor level: i) implication of short circuit stress on threshold voltage and ii) implication of threshold voltage instabilities on aging phenomena.

講座時間：2020 年 06 月 16 日 (周二)        下午 16:00-17:00

講座主題：Silicon Carbide MOSFET Testing for Wear and Abnormal Conditions

參與方式：騰訊會議，會議號：474 803 5872

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